A physics-informed uncertainty-aware surrogate for $p$-$n$ junction diodes

Paper recorded by Signals 4 on 2026-10-29 in cs.LG. Abstract reproduced from arXiv; link to the original below.

Published 2026-10-29 on arXiv · recorded by Signals 4 on 2026-10-30

Category: cs.LG · 机器学习 · first seen 2026-10-30

Abstract

We develop an uncertainty-aware physics-informed surrogate for a one-dimensional $p$-$n$ junction diode, conditioned on device length, doping and bias. Using the internal state of the device as predicted by the surrogate we develop a test-suite of quantities of interest including the terminal current, depletion width, peak field and stored charge. The formalism and the quantities are can be extend

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